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Materials Science Research Lecture

Wednesday, February 28, 2024
4:00pm to 5:00pm
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Noyes 153 (J. Holmes Sturdivant Lecture Hall)
Setting a new quality standard for Molecular Beam Epitaxial GaAs quantum wells
Loren Pfeiffer, Professor, Electrical and Computer Engineering., Princeton,

***Refreshments at 3:45pm in Noyes lobby


This talk will be an ultra-high-mobility MBE growth tutorial, with an emphasis on certain innovations to our MBE technique that over my career have allowed us to raise the GaAs electron mobility from 5 million to 57 million cm2/V s.

More about the Speaker:

Loren Pfeiffer directs the High Electron Mobility Molecular Beam Epitaxy Research Group in the Electrical Engineering Department of Princeton University. He is an expert in the material synthesis technique, Molecular Beam Epitaxy, especially as it applies to the synthesis of the electronic material, gallium-aluminum arsenide. High mobility systems of electrons in gallium arsenide confined to two or fewer-dimensions within epitaxial barriers of aluminum-gallium arsenide have become one of the workhorses of modern semiconductor physics research. His Group at Princeton University concentrates on the Molecular Beam Epitaxial growth of this material at the very highest level of crystal perfection, and studies its novel properties.

For more information, please contact Jennifer Blankenship by email at [email protected].