KNI Special Seminar on Band Gap Engineering

Join the Kavli Nanoscience Institute for a special seminar with PhD researcher James Mann from the School of Chemistry and Photon Science Institute at the University of Manchester.

NOTE: This is an in-person event. All attendees are required to follow campus Covid-safety guidelines.

Band Gap Engineering: Direct Writing of Lead cyclohexylxanthate and Lead isopropylxanthate Precursors to Produce Lead Sulfide for Next Generation Photodetector Devices

Lead sulfide (PbS) has shown interest due to its narrow band gap (~0.41 eV), being easily manipulated as either a p- or n- type semiconductor. These properties provide potential electronic and optoelectronic applications, such as photodetectors. We have found that lead cyclohexylxanthate and lead isopropylxanthate can be decomposed under electron beam to form 80 nm pitch structures. This is of particular interest due to that it demonstrates that devices are simple to produce because photomasks and etching steps are not required. Monte Carlo simulations are to be implied to further characterise these materials for secondary electron pathways as well as demonstrating full photodetector and electrical characterization. This presentation will describe how these materials can be directly written using electron beam lithography and discuss further applications for this material.